MT53B384 Series

Catalog

IC DRAM 24GBIT 1.6GHZ 272WFBGA

Part	Clock Frequency	Technology	Memory Size	Memory Type	Memory Format	Supplier Device Package	Mounting Type	Voltage - Supply	Package / Case	Memory Organization [custom]	Memory Organization [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Memory Organization	Grade	Qualification
Micron Technology Inc. MT53B384M64D4NH-062 WT ES:B	1600 MHz	SDRAM - Mobile LPDDR4	24 Gbit	Volatile	DRAM	272-WFBGA (15x15)	Surface Mount	1.1 V	272-WFBGA	384 M	64	85 °C	-30 °C
Micron Technology Inc. MT53B384M32D2DS-062 XT:B TR	1600 MHz	SDRAM - Mobile LPDDR4	1.5 MB	Volatile	DRAM	200-WFBGA (10x14.5)	Surface Mount	1.1 V	200-WFBGA			105 °C	-30 °C	384 M
Micron Technology Inc. MT53B384M32D2DS-062 AIT:B	1600 MHz	SDRAM - Mobile LPDDR4	1.5 MB	Volatile	DRAM	200-WFBGA (10x14.5)	Surface Mount	1.1 V	200-WFBGA			95 °C	-40 °C	384 M	Automotive	AEC-Q100
Micron Technology Inc. MT53B384M32D2NP-062 WT:B TR	1600 MHz	SDRAM - Mobile LPDDR4	1.5 MB	Volatile	DRAM	200-WFBGA (10x14.5)	Surface Mount	1.1 V	200-WFBGA			85 °C	-30 °C	384 M
Micron Technology Inc. MT53B384M64D4NK-062 XT:B	1600 MHz	SDRAM - Mobile LPDDR4	24 Gbit	Volatile	DRAM	366-WFBGA (15x15)	Surface Mount	1.1 V	366-WFBGA	384 M	64	105 °C	-30 °C
Micron Technology Inc. MT53B384M32D2NP-062 AIT:B	1600 MHz	SDRAM - Mobile LPDDR4	1.5 MB	Volatile	DRAM	200-WFBGA (10x14.5)	Surface Mount	1.1 V	200-WFBGA			95 °C	-40 °C	384 M	Automotive	AEC-Q100
Micron Technology Inc. MT53B384M64D4NK-053 WT ES:B	1866 MHz	SDRAM - Mobile LPDDR4	24 Gbit	Volatile	DRAM	366-WFBGA (15x15)	Surface Mount	1.1 V	366-WFBGA	384 M	64	85 °C	-30 °C
Micron Technology Inc. MT53B384M64D4NK-053 WT ES:A TR	1866 MHz	SDRAM - Mobile LPDDR4	24 Gbit	Volatile	DRAM	366-WFBGA (15x15)	Surface Mount	1.1 V	366-WFBGA	384 M	64	85 °C	-30 °C
Micron Technology Inc. MT53B384M32D2DS-062 XT:B	1600 MHz	SDRAM - Mobile LPDDR4	1.5 MB	Volatile	DRAM	200-WFBGA (10x14.5)	Surface Mount	1.1 V	200-WFBGA			105 °C	-30 °C	384 M
Micron Technology Inc. MT53B384M64D4TP-062 XT:C	1600 MHz	SDRAM - Mobile LPDDR4	24 Gbit	Volatile	DRAM			1.1 V		384 M	64	105 °C	-30 °C