MBR10 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 10A TO220AC
| Part | Voltage - Forward (Vf) (Max) @ If [Max] | Package / Case | Speed | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Mounting Type | Current - Reverse Leakage @ Vr | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 710 mV | TO-220-2 | 200 mA 500 ns | 175 ░C | -65 C | Schottky | 60 V | 10 A | Through Hole | 100 µA | TO-220AC | ||
Vishay General Semiconductor - Diodes Division | TO-220-2 | 200 mA 500 ns | 150 °C | -65 C | Schottky | 45 V | 10 A | Through Hole | 100 µA | TO-220AC | 840 mV | 600 pF | |
Vishay General Semiconductor - Diodes Division | 710 mV | TO-220-2 | 200 mA 500 ns | 175 ░C | -65 C | Schottky | 50 V | 10 A | Through Hole | 100 µA | TO-220AC | ||
Vishay General Semiconductor - Diodes Division | TO-220-2 | 200 mA 500 ns | 175 ░C | -65 C | Schottky | 45 V | 10 A | Through Hole | 100 µA | TO-220AC | 630 mV | ||
Vishay General Semiconductor - Diodes Division | TO-220-2 | 200 mA 500 ns | 150 °C | -65 C | Schottky | 35 V | 10 A | Through Hole | 100 µA | TO-220AC | 570 mV | ||
Vishay General Semiconductor - Diodes Division | TO-220-2 | 200 mA 500 ns | 175 ░C | -65 C | Standard | 35 V | 10 A | Through Hole | 100 µA | TO-220AC | 630 mV | ||
Vishay General Semiconductor - Diodes Division | TO-220-2 | 200 mA 500 ns | 175 ░C | -55 C | Schottky | 100 V | 10 A | Through Hole | 100 µA | TO-220AC | 790 mV | 400 pF |