FDB15N50 Series

Power MOSFET, N-Channel, UniFETTM, 500 V, 15 A, 380 mΩ, D2PAK

Catalog

Power MOSFET, N-Channel, UniFETTM, 500 V, 15 A, 380 mΩ, D2PAK

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs (Max)	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]
ON Semiconductor FDB15N50	1850 pF	41 nC	15 A	500 V	10 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V	N-Channel	Surface Mount	4 V	TO-263 (D2PAK)	MOSFET (Metal Oxide)	380 mOhm	300 W

Catalog

Power MOSFET, N-Channel, UniFETTM, 500 V, 15 A, 380 mΩ, D2PAK

Key Features

• Low gate charge Qgresults in simple drive requirement ( Typ. 33nC)

• Improved Gate, avalanche and high reapplied dv/dt ruggedness

• Reduced RDS(on)( 330mΩ ( Typ.)@ VGS= 10V, ID= 7.5A)

• Reduced Miller capacitance and low Input capacitance ( Typ. Crss= 16pF)

• Improved switching speed with low EMI

• 175oC rated junction temperature

Description

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.