FDPC8012S Series

25V Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET

Catalog

25V Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET

Part	Rds On (Max) @ Id, Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Configuration	FET Feature	Power - Max	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDPC8012S	7 mOhm	MOSFET (Metal Oxide)	1075 pF	8 nC	2 N-Channel (Dual) Asymmetrical	Logic Level Gate	800 mW 900 mW	Surface Mount	8-PowerWDFN	25 V	-55 °C	150 °C	2.2 V	13 A 26 A

Catalog

25V Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET

Key Features

• Q1 N-ChannelMax. RDS(on)= 7.0 mΩ at VGS= 4.5 V, ID= 12 A

• Q2 N-ChannelMax. RDS(on)= 2.2 mΩ at VGS= 4.5 V, ID= 23 A

• Low inductance packaging shortens rise/fall times, resulting in lower switching losses

• MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

• RoHS Compliant

Description

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.