VI20120 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 120V 20A TO262AA
| Part | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Speed | Mounting Type | Voltage - Forward (Vf) (Max) @ If [Max] | Package / Case | Technology | Current - Average Rectified (Io) (per Diode) | Diode Configuration | Voltage - Forward (Vf) (Max) @ If | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -40 °C | 150 °C | 300 µA | 120 V | TO-262AA | 200 mA 500 ns | Through Hole | 1.12 V | I2PAK TO-262-3 Long Leads TO-262AA | Schottky | |||||
Vishay General Semiconductor - Diodes Division | -40 °C | 150 °C | 700 µA | 120 V | TO-262AA | 200 mA 500 ns | Through Hole | I2PAK TO-262-3 Long Leads TO-262AA | Schottky | 10 A | 1 Pair Common Cathode | 900 mV | |||
Vishay General Semiconductor - Diodes Division | -40 °C | 150 °C | 250 µA | 120 V | TO-262AA | 200 mA 500 ns | Through Hole | 1.33 V | I2PAK TO-262-3 Long Leads TO-262AA | Schottky | |||||
Vishay General Semiconductor - Diodes Division | -40 °C | 150 °C | 300 µA | 120 V | TO-262AA | 200 mA 500 ns | Through Hole | 1.12 V | I2PAK TO-262-3 Long Leads TO-262AA | Schottky | |||||
Vishay General Semiconductor - Diodes Division | -40 °C | 150 °C | 700 µA | 120 V | TO-262AA | 200 mA 500 ns | Through Hole | I2PAK TO-262-3 Long Leads TO-262AA | Schottky | 10 A | 1 Pair Common Cathode | 900 mV | Automotive | AEC-Q101 |