IXTH240N15X4 Series

DiscMSFT NCh HiPerFET-Q Class TO-247AD

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMSFT NCh HiPerFET-Q Class TO-247AD

Part	Supplier Device Package	Technology	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type
Littelfuse/Commercial Vehicle Products IXTH240N15X4	TO-247	MOSFET (Metal Oxide)	TO-247-3	-55 °C	175 ░C	4.5 V	195 nC	8900 pF	4.4 mOhm	150 V	20 V	Through Hole	940 W	240 A	10 V	N-Channel

Catalog

DiscMSFT NCh HiPerFET-Q Class TO-247AD

Key Features

• Low on-resistance RDS(ON)and gate charge Qg

• dv/dt ruggedness

• Avalanche capability

• International standard packages

Description

These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.