FDP3651U Series

N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ. Recommended replacement is FDP090N10

Catalog

N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ. Recommended replacement is FDP090N10

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]
ON Semiconductor FDP3651U	TO-220-3	18 mOhm	20 V	100 V	Through Hole	TO-220-3	10 V	-55 °C	175 ░C	69 nC	MOSFET (Metal Oxide)	N-Channel	255 W	5522 pF	5.5 V
ON Semiconductor FDP3652	TO-220-3	16 mOhm	20 V	100 V	Through Hole	TO-220-3	6 V 10 V	-55 °C	175 ░C		MOSFET (Metal Oxide)	N-Channel	150 W	2880 pF	4 V	53 nC	9 A 61 A
ON Semiconductor FDP3632	TO-220-3	9 mOhm	20 V	100 V	Through Hole	TO-220-3	6 V 10 V	-55 °C	175 ░C	110 nC	MOSFET (Metal Oxide)	N-Channel		6000 pF	4 V		12 A 80 A	310 W

N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ. Recommended replacement is FDP090N10

• rDS(ON)= 7.5m? (Typ.), VGS= 10V, ID= 80A

• Qg(tot)= 84nC (Typ.), VGS= 10V

• Low Miller Charge

• Low QRRBody Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

• RoHS Compliant

N-Channel PowerTrench®MOSFET 100 V, 80 A, 18 mΩ