SIRC16 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 25V 60A PPAK SO-8
| Part | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Technology | Vgs(th) (Max) @ Id | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Package / Case | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 54.3 W | 5150 pF | -55 °C | 150 °C | Surface Mount | 4.5 V 10 V | -16 V 20 V | 25 V | 48 nC | N-Channel | MOSFET (Metal Oxide) | 2.4 V | PowerPAK® SO-8 | 60 A | PowerPAK® SO-8 | 0.96 mOhm |