SUP60 Series

Catalog

MOSFET N-CH 60V 60A TO220AB

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SUP60N06-12P-E3	4.5 V	12 mOhm	Through Hole	TO-220-3	1970 pF	20 V	3.25 W 100 W	TO-220AB	55 nC	10 V	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	60 A	60 V
Vishay General Semiconductor - Diodes Division SUP60N06-12P-GE3	4.5 V	12 mOhm	Through Hole	TO-220-3	1970 pF	20 V	3.25 W 100 W	TO-220AB	55 nC	10 V	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	60 A	60 V
Vishay General Semiconductor - Diodes Division SUP60N10-16L-E3	3 V		Through Hole	TO-220-3	3820 pF	20 V	150 W	TO-220AB		4.5 V 10 V	N-Channel	-55 °C	175 ░C	MOSFET (Metal Oxide)	60 A	100 V	16 mOhm	110 nC
Vishay General Semiconductor - Diodes Division SUP60N02-4M5P-E3	3 V		Through Hole	TO-220-3	5950 pF	20 V	3.75 W 120 W	TO-220AB	50 nC	4.5 V 10 V	N-Channel	-55 °C	175 ░C	MOSFET (Metal Oxide)	60 A	20 V	4.5 mOhm