SIHA17 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 800V 7A TO220
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Package / Case | Drain to Source Voltage (Vdss) | Technology | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | FET Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Mounting Type | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 30 V | TO-220-3 Full Pack | 800 V | MOSFET (Metal Oxide) | 290 mOhm | 10 V | TO-220 Full Pack | 1260 pF | 62 nC | 34 W | N-Channel | 7 A | 4 V | Through Hole | |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 30 V | TO-220-3 Full Pack | 800 V | MOSFET (Metal Oxide) | 290 mOhm | 10 V | TO-220 Full Pack | 2408 pF | 122 nC | N-Channel | 15 A | 4 V | Through Hole | 35 W |