Bipolar Transistors, PNP + NPN Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-363(US6)
Bipolar Transistors, PNP + NPN Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-363(US6)
Bipolar Transistors, PNP + NPN Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-363(US6)
| Part | Current - Collector (Ic) (Max) [Max] | Qualification | Supplier Device Package | Mounting Type | Transistor Type | Current - Collector Cutoff (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Resistor - Emitter Base (R2) | Frequency - Transition | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 100 mA | AEC-Q101 | US6 | Surface Mount | 1 NPN 1 PNP - Pre-Biased (Dual) | 500 nA | 300 mV | 200 mW | 50 V | 6-TSSOP SC-88 SOT-363 | 50 | 10 kOhms | 200 MHz 250 MHz | Automotive |