NVD4810N Series

Single N-Channel Power MOSFET 30V, 54A, 10mΩ

Catalog

Single N-Channel Power MOSFET 30V, 54A, 10mΩ

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Technology	Qualification	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Supplier Device Package
ON Semiconductor NVD4810NT4G-VF01	9 A 54 A	N-Channel	1.4 W 50 W	Surface Mount	20 V	MOSFET (Metal Oxide)	AEC-Q101	10 mOhm	30 V	Automotive	-55 °C	175 ░C	2.5 V	1350 pF	4.5 V 10 V	21 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK-3

Single N-Channel Power MOSFET 30V, 54A, 10mΩ

• Low RDS(on)to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

Automotive Power MOSFET. 30V, 54A, 10 mΩ, Single N-Channel, DPAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.