NTHL095N65S3H Series

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 30 A, 95 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 30 A, 95 mΩ, TO-247

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor NTHL095N65S3H	650 V	95 mOhm	N-Channel	Through Hole	TO-247-3	58 nC	30 A	10 V	-55 °C	150 °C	30 V	MOSFET (Metal Oxide)	TO-247-3	208 W	2833 pF

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 30 A, 95 mΩ, TO-247

Key Features

• 700 V @ TJ = 150°C

• Ultra Low Gate Charge (Typ. Qg = 58 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 398 pF)

• Fast switching performance with robust body diode

• 100% Avalanche Tested

• RoHS Compliant

• Typ. RDS(on) = 77 m Ω

• Internal Gate Resistance: 1.2 Ω

Description

SUPERFET III MOSFET is ON Semiconductor’s brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provides superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III FAST MOSFET series helpsminimize various power systems and improve system efficiency.