High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.125 Ω@10V, TO-220, DTMOSⅣ-H
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.125 Ω@10V, TO-220, DTMOSⅣ-H
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.125 Ω@10V, TO-220, DTMOSⅣ-H
| Part | Operating Temperature | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Vgs(th) (Max) @ Id | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Technology | Vgs (Max) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 150 °C | 180 W | 10 V | TO-220 | 3.5 V | N-Channel | 2400 pF | 600 V | 40 nC | Through Hole | 25 A | TO-220-3 | MOSFET (Metal Oxide) | 30 V | 125 mOhm |