SI3812 Series

Catalog

MOSFET N-CH 20V 2A 6TSOP

Part	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Feature	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type
Vishay General Semiconductor - Diodes Division SI3812DV-T1-E3	N-Channel	MOSFET (Metal Oxide)	4 nC	SOT-23-6 Thin TSOT-23-6	2.5 V 4.5 V	600 mV	Schottky Diode (Isolated)	125 mOhm	-55 °C	150 °C	6-TSOP	830 mW	2 A	12 V	20 V	Surface Mount
Vishay General Semiconductor - Diodes Division SI3812DV-T1-GE3	N-Channel	MOSFET (Metal Oxide)	4 nC	SOT-23-6 Thin TSOT-23-6	2.5 V 4.5 V	600 mV	Schottky Diode (Isolated)	125 mOhm	-55 °C	150 °C	6-TSOP	830 mW	2 A	12 V	20 V	Surface Mount