SIHG25 Series

Catalog

MOSFET N-CH 500V 26A TO247AC

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SIHG25N50E-GE3	10 V	MOSFET (Metal Oxide)	86 nC	1980 pF	145 mOhm	250 W	26 A	TO-247-3	30 V	4 V	500 V	N-Channel	Through Hole	TO-247AC	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SIHG25N40D-GE3	10 V	MOSFET (Metal Oxide)		1707 pF	170 mOhm		25 A	TO-247-3	30 V	5 V	400 V	N-Channel	Through Hole	TO-247AC	-55 °C	150 °C	278 W	88 nC