CNY17 Series

Catalog

OPTOISO 5KV TRANS W/BASE 6DIP

Part	Current Transfer Ratio (Min)	Package / Case	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Output (Max) [Max]	Input Type	Number of Channels [custom]	Current - DC Forward (If) (Max) [Max]	Current Transfer Ratio (Max)	Supplier Device Package	Voltage - Forward (Vf) (Typ)	Mounting Type	Output Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Output / Channel	Vce Saturation (Max) [Max]	Package / Case	Package / Case	Current Transfer Ratio (Min) [Min]	Current Transfer Ratio (Max) [Max]
Broadcom Limited CNY17-1-060E	40 %	6-DIP (0.300" 7.62mm)	5 µs	5 µs	70 V	DC	1	60 mA	80 %	6-DIP	1.4 V	Through Hole	Transistor with Base	100 °C	-55 C	150 mA	300 mV
Broadcom Limited CNY17-2-300E	63 %	6-SMD Gull Wing	5 µs	5 µs	70 V	DC	1	60 mA	125 %	6-SMD	1.4 V	Surface Mount	Transistor with Base	100 °C	-55 C	150 mA	300 mV
Broadcom Limited CNY17-2-360E	63 %	6-SMD Gull Wing	5 µs	5 µs	70 V	DC	1	60 mA	125 %	6-SMD	1.4 V	Surface Mount	Transistor with Base	100 °C	-55 C	150 mA	300 mV
Broadcom Limited CNY17-2-W60E	63 %	6-DIP	5 µs	5 µs	70 V	DC	1	60 mA	125 %	6-DIP	1.4 V	Through Hole	Transistor with Base	100 °C	-55 C	150 mA	300 mV	10.16 mm	0.4 in
Broadcom Limited CNY17-1-560E	40 %	6-SMD Gull Wing	5 µs	5 µs	70 V	DC	1	60 mA	80 %	6-SMD	1.4 V	Surface Mount	Transistor with Base	100 °C	-55 C	150 mA	300 mV
Broadcom Limited CNY17-3-560E		6-SMD Gull Wing	5 µs	5 µs	70 V	DC	1	60 mA		6-SMD	1.4 V	Surface Mount	Transistor with Base	100 °C	-55 C	150 mA	300 mV			100 %	200 %
Broadcom Limited CNY17-3-500E		6-SMD Gull Wing	5 µs	5 µs	70 V	DC	1	60 mA		6-DIP Gull Wing	1.4 V	Surface Mount	Transistor with Base	100 °C	-55 C	150 mA	300 mV			100 %	200 %
Broadcom Limited CNY17-4-060E	160 %	6-DIP (0.300" 7.62mm)	5 µs	5 µs	70 V	DC	1	60 mA		6-DIP	1.4 V	Through Hole	Transistor with Base	100 °C	-55 C	150 mA	300 mV				320 %
Broadcom Limited CNY17-4-560E	160 %	6-SMD Gull Wing	5 µs	5 µs	70 V	DC	1	60 mA		6-SMD	1.4 V	Surface Mount	Transistor with Base	100 °C	-55 C	150 mA	300 mV				320 %
Broadcom Limited CNY17-2-W00E	63 %	6-DIP	5 µs	5 µs	70 V	DC	1	60 mA	125 %	6-DIP	1.4 V	Through Hole	Transistor with Base	100 °C	-55 C	150 mA	300 mV	10.16 mm	0.4 in