BUH51 Series

NPN, Silicon Plastic Transistor

Catalog

NPN, Silicon Plastic Transistor

Part	Transistor Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition
ON Semiconductor BUH51	NPN	TO-126-3 TO-225AA	8	3 A	100 µA	TO-126	Through Hole	500 V	150 °C	-65 °C	50 W	500 mV	23 MHz

Catalog

NPN, Silicon Plastic Transistor

Key Features

• Improved Efficiency Due to the Low Base Drive Requirements: High and Flat DC Current Gain hFEFast Switching

• Robustness Thanks to the Technology Developed to Manufacture this Device

• Motorola "6 SIGMA" Philosophy Providing Tight and Reproducible Parametric Distributions

• This device is available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

Description

The BUH51 has an application specific state-of-art die designed for u 50 Watts Halogen electronic transformers.This power transistor is specifically designed to sustain the large inrush current during either the start-up conditions or under a short circuit across the load.This High voltage/High speed product exhibits the following main features: