SSM6N67NU Series

Catalog

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 30 V, 4.0 A, 0.0391 Ω@4.5V, SOT-1118(UDFN6)

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	FET Feature	Configuration	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage SSM6N67NU,LF	4 A	Surface Mount	6-µDFN (2x2)	1 V	30 V	2 W	39.1 mOhm	MOSFET (Metal Oxide)	150 °C	310 pF	1.8 V	Logic Level Gate	2 N-Channel (Dual)	3.2 nC