SI4463 Series

Catalog

MOSFET P-CH 20V 13.6A/49A 8SO

Part	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI4463CDY-T1-GE3	4250 pF	2.7 W 5 W	Surface Mount	1.4 V	20 V	162 nC	8 mOhm	10 V	2.5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	P-Channel	8-SOIC	3.9 mm	0.154 in	13.6 A 49 A	12 V	8-SOIC
Vishay General Semiconductor - Diodes Division SI4463BDY-T1-GE3		1.5 W	Surface Mount	1.4 V	20 V		11 mOhm	10 V	2.5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	P-Channel	8-SOIC	3.9 mm	0.154 in	9.8 A	12 V	8-SOIC	56 nC