FCB070N65S3 Series

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 44 A, 70 mΩ, D2PAK

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 44 A, 70 mΩ, D2PAK

Part	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	FET Type
ON Semiconductor FCB070N65S3	70 mOhm	MOSFET (Metal Oxide)	Surface Mount	30 V	10 V	650 V	3090 pF	-55 °C	150 °C	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	44 A	78 nC	4.5 V	312 W	N-Channel

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 44 A, 70 mΩ, D2PAK

Key Features

• 700 V @ TJ = 150oC

• Ultra Low Gate Charge (Typ. Qg = 78 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)

• Optimized Capacitance

• Typ. RDS(on)= 62 mΩ

• 100% Avalanche Tested

• RoHS Compliant

• Wave soldering guarantee

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.