INA592 Series

High-precision (40-µV offset), 2-MHz, 88-dB CMRR, low-power, e-trim™ difference amplifier

Catalog

High-precision (40-µV offset), 2-MHz, 88-dB CMRR, low-power, e-trim™ difference amplifier

Part	Package / Case	Package / Case [y]	Package / Case [x]	Current - Supply	Output Type	Supplier Device Package	Current - Output / Channel	Mounting Type	Number of Circuits	Voltage - Input Offset	Operating Temperature [Min]	Operating Temperature [Max]	-3db Bandwidth	Amplifier Type	Voltage - Supply Span (Min) [Min]	Voltage - Supply Span (Max) [Max]	Slew Rate
Texas Instruments INA592IDT	8-SOIC	3.9 mm	0.154 in	1.1 mA	Rail-to-Rail	8-SOIC	65 mA	Surface Mount	1	28 µV	-40 °C	125 °C	2 MHz	Differential	4.5 V	36 V	18 V/µs

Catalog

High-precision (40-µV offset), 2-MHz, 88-dB CMRR, low-power, e-trim™ difference amplifier

Key Features

• G = 1/2 amplifierG = 2 amplifierLow offset voltage: 40 µV (maximum)Low offset voltage drift: ±2 µV/°C (maximum)Low noise: 18 nV/√Hzat 1 kHzLow gain error: ±0.03% (maximum)High common-mode rejection: 88 dB (minimum)Wide bandwidth: 2 MHz GBWLow quiescent current: 1.1 mA per amplifierHigh slew rate: 18 V/µsHigh capacitive load drive capability: 500 pFWide supply range:Single supply: 4.5 V to 36 VDual supply: ±2.25 V to ±18 VSpecified temperature range: –40°C to +125°CPackages: 8-Pin MSOP and SOIC, 10-pin VSONG = 1/2 amplifierG = 2 amplifierLow offset voltage: 40 µV (maximum)Low offset voltage drift: ±2 µV/°C (maximum)Low noise: 18 nV/√Hzat 1 kHzLow gain error: ±0.03% (maximum)High common-mode rejection: 88 dB (minimum)Wide bandwidth: 2 MHz GBWLow quiescent current: 1.1 mA per amplifierHigh slew rate: 18 V/µsHigh capacitive load drive capability: 500 pFWide supply range:Single supply: 4.5 V to 36 VDual supply: ±2.25 V to ±18 VSpecified temperature range: –40°C to +125°CPackages: 8-Pin MSOP and SOIC, 10-pin VSON

Description

The INA592 device is a low-power, wide bandwidth difference amplifier consisting of a precision operational amplifier (op amp) and a precision resistor network. Excellent tracking of resistors (TCR) maintains gain accuracy and common-mode rejection over temperature. Unique features such as low offset 40 µV (maximum), low offset drift (2 µV/°C maximum) high slew rate (18 V/µs), and high capacitive load drive of up to 500 pF make the INA592 a robust, high-performance difference amplifier for high-voltage industrial applications. The common-mode range of the internal op amp extends to the negative supply, enabling the device to operate in single-supply applications. The device operates on single (4.5 V to 36 V) or dual supplies (±2.25 V to ±18 V). The difference amplifier is the foundation of many commonly used circuits. The INA592 provides this circuit function without using an expensive precision resistor network. The INA592 device is a low-power, wide bandwidth difference amplifier consisting of a precision operational amplifier (op amp) and a precision resistor network. Excellent tracking of resistors (TCR) maintains gain accuracy and common-mode rejection over temperature. Unique features such as low offset 40 µV (maximum), low offset drift (2 µV/°C maximum) high slew rate (18 V/µs), and high capacitive load drive of up to 500 pF make the INA592 a robust, high-performance difference amplifier for high-voltage industrial applications. The common-mode range of the internal op amp extends to the negative supply, enabling the device to operate in single-supply applications. The device operates on single (4.5 V to 36 V) or dual supplies (±2.25 V to ±18 V). The difference amplifier is the foundation of many commonly used circuits. The INA592 provides this circuit function without using an expensive precision resistor network.