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NBRB8H100 Series

Schottky Barrier Rectifier, 100 V, 8.0 A

Manufacturer: ON Semiconductor

Catalog

Schottky Barrier Rectifier, 100 V, 8.0 A

Key Features

Guarding for Stress Protection
Low Forward Voltage
175C Operating Junction Temperature
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Short Heat Sink Tab Manufactured - Not Sheared!
Case: Molded Expoxy
Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds
Epoxy Meets UL94, VO at 1/8
These are Pb-Free Packages
NBRB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Description

AI
The Schottky Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.