FFSH30120A-F155 Series

SiC Diode, 1200V, 30A, TO-247-2, Schottky Diode

Catalog

SiC Diode, 1200V, 30A, TO-247-2, Schottky Diode

Part	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Technology	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Mounting Type	Current - Average Rectified (Io)
ON Semiconductor FFSH30120A-F155	TO-247-2	175 ░C	-55 C	200 µA	0 ns	1.75 V	1740 pF	SiC (Silicon Carbide) Schottky	TO-247-2	1.2 kV	No Recovery Time	Through Hole	46 A

Catalog

SiC Diode, 1200V, 30A, TO-247-2, Schottky Diode

Key Features

• Max Junction Temperature

• Avalanche Rated

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery / No Forward Recovery

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.