IRLS640A Series

Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 9.8 A, 180 mΩ, TO-220F

Catalog

Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 9.8 A, 180 mΩ, TO-220F

Part	FET Type	Power Dissipation (Max)	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)
ON Semiconductor IRLS640A	N-Channel	40 W	TO-220-3 Full Pack	2 V	-55 °C	150 °C	1705 pF	Through Hole	MOSFET (Metal Oxide)	5 V	TO-220F-3	200 V	56 nC	180 mOhm	20 V

Catalog

Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 9.8 A, 180 mΩ, TO-220F

Key Features

• 9.8 A, 200 VrDS(ON)= 180 mΩ @ VGS= 5 V

• Low Gate Charge (Typ. 40 nC)

• Low Crss(Typ. 95 pF)

• Fast Switching Speed

• 100% Avalanche Tested

• Improved dv/dt Capability

• Logic-Level Gate Drive

Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, ad withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.