G3R160 Series

Catalog

SIC MOSFET N-CH 22A TO247-3

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max) [Min]	Vgs (Max) [Max]
GeneSiC Semiconductor G3R160MT12D	2.69 V	15 V	123 W	175 °C	-55 °C	192 mOhm	15 V	28 nC	Through Hole	TO-247-3	N-Channel	TO-247-3	730 pF	1.2 kV	22 A
GeneSiC Semiconductor G3R160MT17D	2.7 V	15 V	175 W	175 °C	-55 °C	208 mOhm	15 V		Through Hole	TO-247-3	N-Channel	TO-247-3		1700 V	21 A	51 nC	1272 pF
GeneSiC Semiconductor G3R160MT12J	2.7 V		128 W	175 °C	-55 °C	208 mOhm	15 V	23 nC	Surface Mount	TO-263-7	N-Channel	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	724 pF	1.2 kV	19 A			-10 V	20 V
GeneSiC Semiconductor G3R160MT17J	2.7 V	15 V	187 W	175 °C	-55 °C	224 mOhm	15 V	29 nC	Surface Mount	TO-263-7	N-Channel	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA		1700 V	18 A		854 pF