TSM4ND60 Series

Catalog

MOSFET N-CH 600V 4A ITO220

Part	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max) [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id
Taiwan Semiconductor Corporation TSM4ND60CI C0G	TO-220-3 Full Pack Isolated Tab	30 V	600 V	2.2 Ohm	MOSFET (Metal Oxide)	41.6 W	N-Channel	17.2 nC	4 A	Through Hole	10 V	582 pF	ITO-220	150 °C	-55 °C	3.8 V