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Complementary 60V Enhancement Mode MOSFET H-Bridge
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Complementary 60V Enhancement Mode MOSFET H-Bridge
Complementary 60V Enhancement Mode MOSFET H-Bridge
| Part | Rds On (Max) @ Id, Vgs | FET Feature | Supplier Device Package | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Package / Case | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 300 mOhm | Logic Level Gate | SM8 | 60 V | 1.3 A 1.6 A | -55 °C | 150 °C | Surface Mount | SOT-223-8 | 2 N and 2 P-Channel (Full Bridge) | 166 pF 233 pF | 3.2 nC | 3 V | MOSFET (Metal Oxide) |