IRFP450 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 14A TO247-3
| Part | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Technology | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Vgs (Max) | Rds On (Max) @ Id, Vgs | Package / Case | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 14 A | Through Hole | 10 V | 2260 pF | TO-247AC | MOSFET (Metal Oxide) | 5 V | 500 V | 30 V | 370 mOhm | TO-247-3 | 200 W | 77 nC | N-Channel | -55 °C | 150 °C | ||
Vishay General Semiconductor - Diodes Division | 14 A | Through Hole | 10 V | 2600 pF | TO-247AC | MOSFET (Metal Oxide) | 4 V | 500 V | 20 V | 400 mOhm | TO-247-3 | N-Channel | -55 °C | 150 °C | 150 nC | 190 W | ||
Vishay General Semiconductor - Diodes Division | 14 A | Through Hole | 10 V | 2600 pF | TO-247AC | MOSFET (Metal Oxide) | 4 V | 500 V | 20 V | 400 mOhm | TO-247-3 | N-Channel | -55 °C | 150 °C | 150 nC | 190 W |