SI4888 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 11A 8SO
| Part | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1.6 V | 4.5 V 10 V | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 11 A | 20 V | 24 nC | 8-SOIC | MOSFET (Metal Oxide) | -55 °C | 150 °C | 30 V | 7 mOhm | N-Channel |