IRF530 Series

Catalog

MOSFET N-CH 100V 14A TO220AB

Part	Power Dissipation (Max) [Max]	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division IRF530	88 W	N-Channel	Through Hole	10 V	670 pF	TO-220AB	TO-220-3	20 V	160 mOhm	14 A	4 V	MOSFET (Metal Oxide)	100 V	-55 °C	175 ░C	26 nC
Vishay General Semiconductor - Diodes Division IRF530PBF-BE3	88 W	N-Channel	Through Hole	10 V	670 pF	TO-220AB	TO-220-3	20 V	160 mOhm	14 A	4 V	MOSFET (Metal Oxide)	100 V	-55 °C	175 ░C	26 nC
Vishay General Semiconductor - Diodes Division IRF530L		N-Channel	Through Hole	10 V	670 pF	TO-262	I2PAK TO-262-3 Long Leads TO-262AA	20 V	160 mOhm	14 A	4 V	MOSFET (Metal Oxide)	100 V	-55 °C	175 ░C	26 nC
Vishay General Semiconductor - Diodes Division IRF530STRR		N-Channel	Surface Mount	10 V	670 pF	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	160 mOhm	14 A	4 V	MOSFET (Metal Oxide)	100 V	-55 °C	175 ░C	26 nC	3.7 W 88 W
Vishay General Semiconductor - Diodes Division IRF530S		N-Channel	Surface Mount	10 V	670 pF	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	160 mOhm	14 A	4 V	MOSFET (Metal Oxide)	100 V	-55 °C	175 ░C	26 nC	3.7 W 88 W