MCT5 Series
Manufacturer: ON Semiconductor
OPTOISO 5.3KV TRANS W/BASE 6SMD
| Part | Supplier Device Package | Input Type | Voltage - Forward (Vf) (Typ) | Vce Saturation (Max) [Max] | Current - DC Forward (If) (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Current Transfer Ratio (Min) [Min] | Current - Output / Channel | Package / Case | Mounting Type | Turn On / Turn Off Time (Typ) [custom] | Turn On / Turn Off Time (Typ) [custom] | Voltage - Output (Max) [Max] | Number of Channels | Voltage - Isolation | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Package / Case | Package / Case | Turn On / Turn Off Time (Typ) | Package / Case | Turn On / Turn Off Time (Typ) | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 6-SMD | DC | 1.25 V | 400 mV | 50 mA | 100 °C | -55 °C | 75 % | 150 mA | 6-SMD Gull Wing | Surface Mount | 1.6 µs | 18 µs | 30 V | 1 | 5300 Vrms | 16 µs | 1.3 µs | |||||||
ON Semiconductor | 6-DIP | DC | 1.25 V | 400 mV | 50 mA | 100 °C | -55 °C | 75 % | 150 mA | 6-DIP | Through Hole | 1.6 µs | 18 µs | 30 V | 1 | 5300 Vrms | 16 µs | 1.3 µs | 0.3 in | 7.62 mm | |||||
ON Semiconductor | 6-DIP | DC | 1.25 V | 400 mV | 50 mA | 100 °C | -55 °C | 75 % | 150 mA | 6-DIP | Through Hole | 1.6 µs | 18 µs | 30 V | 1 | 5300 Vrms | 16 µs | 1.3 µs | 0.3 in | 7.62 mm | |||||
ON Semiconductor | 6-DIP | DC | 1.25 V | 400 mV | 50 mA | 100 °C | -55 °C | 150 % | 150 mA | 6-DIP | Through Hole | 30 V | 1 | 5300 Vrms | 0.3 in | 7.62 mm | 2.5 µs 14 µs | ||||||||
ON Semiconductor | 6-DIP | DC | 1.25 V | 400 mV | 50 mA | 100 °C | -55 °C | 150 % | 150 mA | 6-DIP | Through Hole | 30 V | 1 | 5300 Vrms | 10.16 mm | 2.5 µs 14 µs | 10.16 mm | ||||||||
ON Semiconductor | 6-DIP | DC | 1.25 V | 400 mV | 50 mA | 100 °C | -55 °C | 150 % | 150 mA | 6-DIP | Through Hole | 30 V | 1 | 5300 Vrms | 10.16 mm | 2.5 µs 14 µs | 10.16 mm | ||||||||
ON Semiconductor | 6-DIP | DC | 1.25 V | 400 mV | 50 mA | 100 °C | -55 °C | 75 % | 150 mA | 6-DIP | Through Hole | 1.6 µs | 18 µs | 30 V | 1 | 5300 Vrms | 16 µs | 1.3 µs | 10.16 mm | 10.16 mm | |||||
ON Semiconductor | 6-DIP | DC | 1.25 V | 400 mV | 50 mA | 100 °C | -55 °C | 60 % | 150 mA | 6-DIP | Through Hole | 30 V | 1 | 5300 Vrms | 10.16 mm | 10.16 mm | 10 µs 400 ns | ||||||||
ON Semiconductor | 6-DIP | DC | 1.25 V | 400 mV | 50 mA | 100 °C | -55 °C | 120 % | 150 mA | 6-DIP | Through Hole | 30 V | 1 | 5300 Vrms | 0.3 in | 7.62 mm | 3 µs 12 µs | 2.5 µs | 16 µs |