SIHB23 Series

Catalog

MOSFET N-CH 600V 23A D2PAK

Part	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Supplier Device Package	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIHB23N60E-GE3	227 W	2418 pF	-55 °C	150 °C	N-Channel	600 V	10 V	95 nC	158 mOhm	4 V	Surface Mount	30 V	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	23 A