SI4396 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 16A 8SO
| Part | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Supplier Device Package | Technology | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 11.5 mOhm | 4.5 V 10 V | 2.6 V | Surface Mount | 1675 pF | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 16 A | 3.1 W 5.4 W | 8-SOIC | MOSFET (Metal Oxide) | 20 V | -55 °C | 150 °C | N-Channel | 45 nC |