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N-Channel Enhancement Mode MOSFET
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N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Qualification | Supplier Device Package | Mounting Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Grade | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 9.2 nC | MOSFET (Metal Oxide) | -55 °C | 150 °C | 20 V | 4.5 V 10 V | 2.12 W | AEC-Q101 | TO-252-3 | Surface Mount | 40 V | 12.2 A | N-Channel | 3 V | 36 mOhm | Automotive | DPAK (2 Leads + Tab) SC-63 TO-252-3 |
 Diodes Inc | 9.2 nC | MOSFET (Metal Oxide) | -55 °C | 150 °C | 20 V | 4.5 V 10 V | 2.12 W | TO-252-3 | Surface Mount | 40 V | 8.5 A | N-Channel | 3 V | 36 mOhm | DPAK (2 Leads + Tab) SC-63 TO-252-3 |