RFD30 Series
Manufacturer: ON Semiconductor
MOSFET N-CH 60V 12A IPAK
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | FET Type | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Technology | Package / Case | Rds On (Max) @ Id, Vgs | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 60 V | 53 W | N-Channel | 4 V | 12 A | -55 °C | 175 ░C | 20 V | MOSFET (Metal Oxide) | IPAK TO-251-3 Short Leads TO-251AA | 150 mOhm | IPAK | 23 nC | Through Hole | 300 pF | 10 V |
ON Semiconductor | 60 V | 38 W | N-Channel | 3 V | 11 A | -55 °C | 175 ░C | 16 V | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 107 mOhm | TO-252AA | Surface Mount | 350 pF | 5 V | |
ON Semiconductor | 60 V | 53 W | N-Channel | 4 V | 12 A | -55 °C | 175 ░C | 20 V | MOSFET (Metal Oxide) | IPAK TO-251-3 Short Leads TO-251AA | 150 mOhm | IPAK | 23 nC | Through Hole | 300 pF | 10 V |
ON Semiconductor | 60 V | 53 W | N-Channel | 4 V | 12 A | -55 °C | 175 ░C | 20 V | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 150 mOhm | TO-252AA | 23 nC | Surface Mount | 300 pF | 10 V |
ON Semiconductor | 60 V | 53 W | N-Channel | 4 V | 12 A | -55 °C | 175 ░C | 20 V | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 150 mOhm | TO-252AA | 23 nC | Surface Mount | 300 pF | 10 V |