SIHJ690 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 600V 5.6A PPAK SO-8
| Part | FET Type | Rds On (Max) @ Id, Vgs | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Mounting Type | Drain to Source Voltage (Vdss) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | N-Channel | 700 mOhm | 30 V | 5.6 A | 10 V | 12 nC | -55 °C | 150 °C | 48 W | 5 V | PowerPAK® SO-8 | 347 pF | PowerPAK® SO-8 | Surface Mount | 600 V | MOSFET (Metal Oxide) |