IS43R83200 Series
Manufacturer: ISSI, Integrated Silicon Solution Inc
IC DRAM 256MBIT PAR 66TSOP II
| Part | Memory Size | Mounting Type | Memory Organization | Package / Case [z] | Package / Case | Package / Case [y] | Clock Frequency | Memory Format | Memory Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Access Time | Memory Interface | Operating Temperature [Min] | Operating Temperature [Max] | Write Cycle Time - Word, Page | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 256 Gbit | Surface Mount | 32 M | 0.4 in | 66-TSSOP | 10.16 mm | 166 MHz | DRAM | Volatile | 2.3 V | 2.7 V | 700 ps | Parallel | 0 °C | 70 °C | 15 ns | 66-TSOP II |
ISSI, Integrated Silicon Solution Inc | 256 Gbit | Surface Mount | 32 M | 0.4 in | 66-TSSOP | 10.16 mm | 200 MHz | DRAM | Volatile | 2.3 V | 2.7 V | 700 ps | Parallel | 0 °C | 70 °C | 15 ns | 66-TSOP II |
ISSI, Integrated Silicon Solution Inc | 256 Gbit | Surface Mount | 32 M | 0.4 in | 66-TSSOP | 10.16 mm | 166 MHz | DRAM | Volatile | 2.3 V | 2.7 V | 700 ps | Parallel | -40 ¯C | 85 C | 15 ns | 66-TSOP II |
ISSI, Integrated Silicon Solution Inc | 256 Gbit | Surface Mount | 32 M | 0.4 in | 66-TSSOP | 10.16 mm | 166 MHz | DRAM | Volatile | 2.3 V | 2.7 V | 700 ps | Parallel | 0 °C | 70 °C | 15 ns | 66-TSOP II |
ISSI, Integrated Silicon Solution Inc | 256 Gbit | Surface Mount | 32 M | 0.4 in | 66-TSSOP | 10.16 mm | 166 MHz | DRAM | Volatile | 2.3 V | 2.7 V | 700 ps | Parallel | 0 °C | 70 °C | 15 ns | 66-TSOP II |
ISSI, Integrated Silicon Solution Inc | 256 Gbit | Surface Mount | 32 M | 0.4 in | 66-TSSOP | 10.16 mm | 200 MHz | DRAM | Volatile | 2.3 V | 2.7 V | 700 ps | Parallel | 0 °C | 70 °C | 15 ns | 66-TSOP II |
ISSI, Integrated Silicon Solution Inc | 256 Gbit | Surface Mount | 32 M | 0.4 in | 66-TSSOP | 10.16 mm | 166 MHz | DRAM | Volatile | 2.3 V | 2.7 V | 700 ps | Parallel | -40 ¯C | 85 C | 15 ns | 66-TSOP II |
ISSI, Integrated Silicon Solution Inc | 256 Gbit | Surface Mount | 32 M | 0.4 in | 66-TSSOP | 10.16 mm | 200 MHz | DRAM | Volatile | 2.3 V | 2.7 V | 700 ps | Parallel | 0 °C | 70 °C | 15 ns | 66-TSOP II |
ISSI, Integrated Silicon Solution Inc | 256 Gbit | Surface Mount | 32 M | 0.4 in | 66-TSSOP | 10.16 mm | 166 MHz | DRAM | Volatile | 2.3 V | 2.7 V | 700 ps | Parallel | 0 °C | 70 °C | 15 ns | 66-TSOP II |
ISSI, Integrated Silicon Solution Inc | 256 Gbit | Surface Mount | 32 M | 0.4 in | 66-TSSOP | 10.16 mm | 200 MHz | DRAM | Volatile | 2.3 V | 2.7 V | 700 ps | Parallel | 0 °C | 70 °C | 15 ns | 66-TSOP II |