SI5476 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 12A PPAK
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Technology | Package / Case | Current - Continuous Drain (Id) @ 25°C | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 20 V | 32 nC | 1100 pF | PowerPAK® ChipFET™ Single | Surface Mount | 34 mOhm | 4.5 V 10 V | 3 V | 60 V | 3.1 W 31 W | MOSFET (Metal Oxide) | PowerPAK® ChipFET™ Single | 12 A | N-Channel |