FQI4 Series

Catalog

MOSFET P-CH 400V 3.5A I2PAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FQI4P40TU	-55 °C	150 °C	TO-262 (I2PAK)	400 V	3.1 Ohm	30 V	5 V	680 pF	3.13 W 85 W	Through Hole	3.5 A	P-Channel	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	23 nC	10 V
ON Semiconductor FQI47P06TU	-55 °C	175 ░C	TO-262 (I2PAK)	60 V	26 mOhm	25 V	4 V		3.75 W 160 W	Through Hole	47 A	P-Channel	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)		10 V	3600 pF	110 nC