SIS322 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 38.3A PPAK1212-8
| Part | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Technology | Package / Case | Vgs (Max) | FET Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 4.5 V 10 V | 3.2 W 19.8 W | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | -16 V 20 V | N-Channel | PowerPAK® 1212-8 | 7.5 mOhm | 38.3 A | 1000 pF | 21.5 nC | Surface Mount | -55 °C | 150 °C | 2.4 V | 30 V |