NTHL033N65S3HF Series

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 70 A, 33 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 70 A, 33 mΩ, TO-247

Part	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
ON Semiconductor NTHL033N65S3HF	30 V	TO-247-3	70 A	6720 pF	650 V	188 nC	500 W	33 mOhm	N-Channel	Through Hole	5 V	10 V	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-247-3

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 70 A, 33 mΩ, TO-247

Key Features

• 700 V @ TJ= 150 °C

• Ultra Low Gate Charge (Typ. Qg= 188 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 1568 pF)

• Excellent body diode performance (low Qrr, robust body diode)

• Optimized Capacitance

• RoHS Compliant

• 100% Avalanche Tested

• Typ. RDS(on)= 28 mΩ

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.