SIHP10 Series

Catalog

MOSFET N-CH 400V 10A TO220AB

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case
Vishay General Semiconductor - Diodes Division SIHP10N40D-GE3	10 A	600 mOhm	MOSFET (Metal Oxide)	30 nC	Through Hole	N-Channel	5 V	TO-220AB	526 pF	147 W	-55 °C	150 °C	400 V	10 V	30 V	TO-220-3
Vishay General Semiconductor - Diodes Division SIHP10N40D-E3	10 A	600 mOhm	MOSFET (Metal Oxide)	30 nC	Through Hole	N-Channel	5 V	TO-220AB	526 pF	147 W	-55 °C	150 °C	400 V	10 V	30 V	TO-220-3