SSM6L09 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET N/P-CH 30V 0.4A/0.2A US6
| Part | Technology | FET Feature | Rds On (Max) @ Id, Vgs | Package / Case | Mounting Type | Configuration | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature | Power - Max [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | Logic Level Gate | 700 mOhm | 6-TSSOP SC-88 SOT-363 | Surface Mount | N and P-Channel | 200 mA 400 mA | 1.8 V | 30 V | 20 pF | 150 °C | 300 mW | US6 |