FQD4P25TM_WS Series

P-Channel QFET® MOSFET -250V, -3.1A, 2.1Ω

Catalog

P-Channel QFET® MOSFET -250V, -3.1A, 2.1Ω

Part	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FQD4P25TM-WS	2.1 Ohm	P-Channel	-55 °C	150 °C	2.5 W 45 W	Surface Mount	5 V	420 pF	250 V	TO-252AA	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	14 nC	10 V	MOSFET (Metal Oxide)	3.1 A

Catalog

P-Channel QFET® MOSFET -250V, -3.1A, 2.1Ω

Key Features

-3.1A, -250V, RDS(on)= 2.1Ω(Max.) @VGS= -10 V, ID= -1.55A

• Low gate charge ( Typ. 10.3nC)

• Low Crss( Typ. 10pF)

• 100% avalanche tested

• RoHS Compliant

Description

This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.