IRF510 Series

Catalog

MOSFET N-CH 100V 5.6A D2PAK

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology
Vishay General Semiconductor - Diodes Division IRF510STRR	180 pF	100 V	N-Channel	-55 °C	175 ░C	4 V	Surface Mount	TO-263 (D2PAK)	540 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.7 W 43 W	20 V	5.6 A	10 V	8.3 nC	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF510PBF-BE3	180 pF	100 V	N-Channel	-55 °C	175 ░C	4 V	Through Hole	TO-220AB	540 mOhm	TO-220-3	43 W	20 V	5.6 A		8.3 nC	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF510L	180 pF	100 V	N-Channel	-55 °C	175 ░C	4 V	Through Hole	TO-262-3	540 mOhm	I2PAK TO-262-3 Long Leads TO-262AA			5.6 A		8.3 nC	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF510STRRPBF	180 pF	100 V	N-Channel	-55 °C	175 ░C	4 V	Surface Mount	TO-263 (D2PAK)	540 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.7 W 43 W	20 V	5.6 A	10 V	8.3 nC	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRF510STRLPBF	180 pF	100 V	N-Channel	-55 °C	175 ░C	4 V	Surface Mount	TO-263 (D2PAK)	540 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	43 W	20 V	5.6 A	10 V	8.3 nC	MOSFET (Metal Oxide)