MURT100 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 400V 50A 3TOWER
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Mounting Type | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Supplier Device Package | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If [Max] | Current - Average Rectified (Io) (per Diode) | Diode Configuration | Technology | Package / Case | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 400 V | 200 mA 500 ns | Chassis Mount | -55 °C | 150 °C | Three Tower | 90 ns | 1.35 V | 50 A | 1 Pair Common Cathode | Standard | Three Tower | |
GeneSiC Semiconductor | 50 V | 200 mA 500 ns | Chassis Mount | -55 °C | 150 °C | Three Tower | 75 ns | 50 A | 1 Pair Common Anode | Standard | Three Tower | 1.3 V | |
GeneSiC Semiconductor | 100 V | 200 mA 500 ns | Chassis Mount | -55 °C | 150 °C | Three Tower | 75 ns | 50 A | 1 Pair Common Anode | Standard | Three Tower | 1.3 V | |
GeneSiC Semiconductor | 100 V | 200 mA 500 ns | Chassis Mount | -55 °C | 150 °C | Three Tower | 75 ns | 50 A | 1 Pair Common Cathode | Standard | Three Tower | 1.3 V | |
GeneSiC Semiconductor | 200 V | 200 mA 500 ns | Chassis Mount | -55 °C | 150 °C | Three Tower | 75 ns | 50 A | 1 Pair Common Cathode | Standard | Three Tower | 1.3 V | |
GeneSiC Semiconductor | 600 V | 200 mA 500 ns | Chassis Mount | -55 °C | 150 °C | Three Tower | 75 ns | 1.7 V | 50 A | 1 Pair Common Cathode | Standard | Three Tower | |
GeneSiC Semiconductor | 400 V | 200 mA 500 ns | Chassis Mount | -55 °C | 150 °C | Three Tower | 90 ns | 1.35 V | 50 A | 1 Pair Common Anode | Reverse Polarity Standard | Three Tower | |
GeneSiC Semiconductor | 600 V | 200 mA 500 ns | Chassis Mount | -55 °C | 150 °C | Three Tower | 75 ns | 1.7 V | 50 A | 1 Pair Common Anode | Reverse Polarity Standard | Three Tower |