2SC2235 Series

Manufacturer: Toshiba Semiconductor and Storage

Catalog

TRANS GP BJT NPN 120V 0.8A 900MW 3-PIN TO-92 MOD

Part	Package / Case	Mounting Type	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]
Toshiba Semiconductor and Storage 2SC2235-Y,F(J	TO-226-3 TO-92-3 Long Body	Through Hole	150 °C	80	100 nA	NPN	120 V	TO-92MOD	800 mA	120 MHz	1 V	900 mW
Toshiba Semiconductor and Storage 2SC2235-Y(T6CN,A,F	TO-226-3 TO-92-3 Long Body	Through Hole	150 °C	80	100 nA	NPN	120 V	TO-92MOD	800 mA	120 MHz	1 V	900 mW
Toshiba Semiconductor and Storage 2SC2235-O(T6FJT,FM	TO-226-3 TO-92-3 Long Body	Through Hole	150 °C	80	100 nA	NPN	120 V	TO-92MOD	800 mA	120 MHz	1 V	900 mW
Toshiba Semiconductor and Storage 2SC2235-Y,USNHF(M	TO-226-3 TO-92-3 Long Body	Through Hole	150 °C	80	100 nA	NPN	120 V	TO-92MOD	800 mA	120 MHz	1 V	900 mW
Toshiba Semiconductor and Storage 2SC2235-Y(T6OMI,FM	TO-226-3 TO-92-3 Long Body	Through Hole	150 °C	80	100 nA	NPN	120 V	TO-92MOD	800 mA	120 MHz	1 V	900 mW
Toshiba Semiconductor and Storage 2SC2235-O,F(J	TO-226-3 TO-92-3 Long Body	Through Hole	150 °C	80	100 nA	NPN	120 V	TO-92MOD	800 mA	120 MHz	1 V	900 mW
Toshiba Semiconductor and Storage 2SC2235-Y(T6ND,AF	TO-226-3 TO-92-3 Long Body	Through Hole	150 °C	80	100 nA	NPN	120 V	TO-92MOD	800 mA	120 MHz	1 V	900 mW
Toshiba Semiconductor and Storage 2SC2235-Y(T6CANOFM	TO-226-3 TO-92-3 Long Body	Through Hole	150 °C	80	100 nA	NPN	120 V	TO-92MOD	800 mA	120 MHz	1 V	900 mW
Toshiba Semiconductor and Storage 2SC2235-Y(T6KMATFM	TO-226-3 TO-92-3 Long Body	Through Hole	150 °C	80	100 nA	NPN	120 V	TO-92MOD	800 mA	120 MHz	1 V	900 mW
Toshiba Semiconductor and Storage 2SC2235-Y(DNSO,AF)	TO-226-3 TO-92-3 Long Body	Through Hole	150 °C	80	100 nA	NPN	120 V	TO-92MOD	800 mA	120 MHz	1 V	900 mW