
DS1270AB Series
Manufacturer: Analog Devices Inc./Maxim Integrated

IC NVSRAM 16MBIT PARALLEL 36EDIP
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Memory Interface | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Size | Memory Organization [custom] | Memory Organization [custom] | Package / Case | Technology | Mounting Type | Supplier Device Package | Memory Format | Write Cycle Time - Word, Page | Memory Type | Access Time | Write Cycle Time - Word, Page [y] | Write Cycle Time - Word, Page [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated | 0 °C | 70 °C | Parallel | 4.75 V | 5.25 V | 2 MB | 2 M | 8 | 36-DIP Module (0.610" 15.49mm) | NVSRAM (Non-Volatile SRAM) | Through Hole | 36-EDIP | NVSRAM | 70 ns | Non-Volatile | 70 ns | ||
Analog Devices Inc./Maxim Integrated | 0 °C | 70 °C | Parallel | 4.75 V | 5.25 V | 2 MB | 2 M | 8 | 36-DIP Module (0.610" 15.49mm) | NVSRAM (Non-Volatile SRAM) | Through Hole | 36-EDIP | NVSRAM | Non-Volatile | 100 ns | 100 ns | 100 ns | |
Analog Devices Inc./Maxim Integrated | 0 °C | 70 °C | Parallel | 4.75 V | 5.25 V | 2 MB | 2 M | 8 | 36-DIP Module (0.610" 15.49mm) | NVSRAM (Non-Volatile SRAM) | Through Hole | 36-EDIP | NVSRAM | Non-Volatile | 100 ns | 100 ns | 100 ns | |
Analog Devices Inc./Maxim Integrated | -40 ¯C | 85 C | Parallel | 4.75 V | 5.25 V | 2 MB | 2 M | 8 | 36-DIP Module (0.610" 15.49mm) | NVSRAM (Non-Volatile SRAM) | Through Hole | 36-EDIP | NVSRAM | 70 ns | Non-Volatile | 70 ns | ||
Analog Devices Inc./Maxim Integrated | 0 °C | 70 °C | Parallel | 4.75 V | 5.25 V | 2 MB | 2 M | 8 | 36-DIP Module (0.610" 15.49mm) | NVSRAM (Non-Volatile SRAM) | Through Hole | 36-EDIP | NVSRAM | 70 ns | Non-Volatile | 70 ns | ||
Analog Devices Inc./Maxim Integrated | -40 ¯C | 85 C | Parallel | 4.75 V | 5.25 V | 2 MB | 2 M | 8 | 36-DIP Module (0.610" 15.49mm) | NVSRAM (Non-Volatile SRAM) | Through Hole | 36-EDIP | NVSRAM | 70 ns | Non-Volatile | 70 ns |