IRFI620 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 200V 4.1A TO220-3
| Part | Drain to Source Voltage (Vdss) | Technology | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 200 V | MOSFET (Metal Oxide) | TO-220-3 | 14 nC | 4.1 A | 20 V | 4 V | 10 V | TO-220-3 Full Pack Isolated Tab | -55 °C | 150 °C | 260 pF | Through Hole | N-Channel |
Vishay General Semiconductor - Diodes Division | 200 V | MOSFET (Metal Oxide) | TO-220-3 | 14 nC | 4.1 A | 20 V | 4 V | 10 V | TO-220-3 Full Pack Isolated Tab | -55 °C | 150 °C | 260 pF | Through Hole | N-Channel |